Determination of the Potential Barrier at the Metal/Oxide Interface in a Specular Spin Valve Structure with Nano-oxide Layers Using Electron Holography

王岩国; 沈峰; 张泽; 蔡建旺; 赖武彦

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Determination of the Potential Barrier at the Metal/Oxide Interface in a Specular Spin Valve Structure with Nano-oxide Layers Using Electron Holography

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The local potential distribution in a specular spin valve structure with nano-oxide layers has been mapped byusing off-axis electron holography in a field emission gun transmission electron microscope. A potential jumpof 3-4 V across the metal/oxide interface was detected for the first time. The presence of the potential barrierconfirms the formation of the metal/insulator/metal structure, which contributes to the increasing mean free pathof spin-polarized electrons via the specular reflection of spin-polarized electrons at the metal/oxide interface. Itleads to nearly double enhancement of the magnetoresistance ratio from 8% to 15%.

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《中国物理快报：英文版》 |2002年第10期|1480-1482|共3页
作者
王岩国; 沈峰; 张泽; 蔡建旺; 赖武彦;
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Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 2724, Beijing 100080;

Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 2724, Beijing 100080;

Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 2724, Beijing 100080;

Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 2724, Beijing 100080;

Beijing Laboratory of Electron Microscopy, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 2724, Beijing 100080;

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中图分类物理学;
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Determination of the Potential Barrier at the Metal/Oxide Interface in a Specular Spin Valve Structure with Nano-oxide Layers Using Electron Holography

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