首页> 中文期刊> 《中国物理快报:英文版》 >Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterostructures Using Pre-deposition Surface Treatment

Pt/Au Schottky Contacts to Modulation-Doped AlxGa1-xN/GaN Heterostructures Using Pre-deposition Surface Treatment

         

摘要

Pt/Au Schottky contacts were fabricated on modulation-doped Alo.22GaNo. 7s/GaN heterostructures. Some dif-ferent pre-deposition surface treatments were used to prevent the formation of the native oxide layer on the Alo.22GaNo.78 surface. X-ray photoelectron spectroscopy measurements indicate that the pre-deposition surface treatment with boiling (NH4)2S solution can remove the native oxide layer on the Alo.22Gao.7sN surface effec-tively. The highest Schottky barrier height of 1.13eV was obtained on the (NH4)2S-treated Al0.22GaNo. 78/GaN heterostructure.

著录项

  • 来源
    《中国物理快报:英文版》 |2002年第12期|1853-1855|共3页
  • 作者单位

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093;

    National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093;

    Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, Kamaba 4-6-1, Meguro-Ku, Tokyo 153, Japan;

    Research Center for Advanced Science and Technology and Institute of Industrial Science, University of Tokyo, Kamaba 4-6-1, Meguro-Ku, Tokyo 153, Japan;

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  • 正文语种 chi
  • 中图分类 物理学;
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