Field Emission from Nanostructured Carbon Films on Si Tips

王万录; 廖克俊; 胡成果; 方亮

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Field Emission from Nanostructured Carbon Films on Si Tips

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Nanostructured carbon thin films on Si tips were prepared by hot filament chemical vapour deposition at different substrate temperatures. The Si tips and films were obtained under various deposition conditions in the same reaction chamber. It was found that the field emission properties from graphite-like nanostructured carbon on Si tips were greatly improved, compared with those of nanodiamond films on Si tips. A turn-on field of 1.2 V. cm-1was observed for high sp2 content thin films on Si tips. The analysis showed that the field emission enhancement effect was caused by the tip geometry, tunnel effect and sp2 content in the films. However, the geometrical enhancement was greater than that of the tunnel and sp2 content effects.

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《中国物理快报：英文版》 |2001年第8期|1132-1134|共3页
作者
王万录; 廖克俊; 胡成果; 方亮;
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Department of Applied Physics, Chongqing University, Chongqing 400044;

Department of Applied Physics, Chongqing University, Chongqing 400044;

Department of Applied Physics, Chongqing University, Chongqing 400044;

Department of Applied Physics, Chongqing University, Chongqing 400044;

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正文语种 chi
中图分类物理学;
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Field Emission from Nanostructured Carbon Films on Si Tips

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