首页> 中文期刊> 《中国物理快报:英文版》 >Excitation Transfer in Vertically Self-Organized Pairs of Unequal-Sized rnInAs/GaAs Quantum Dots

Excitation Transfer in Vertically Self-Organized Pairs of Unequal-Sized rnInAs/GaAs Quantum Dots

         

摘要

The excitation transfer processes in vertically self-organized pairs of unequal-sized quantum dots (QD's), which rnare created in InAs/GaAs bilayers with different InAs deposition amounts in the first and second layers, have rnbeen investigated experimentally by photoluminescence technique. The distance between the two dot layers is rnvaried from 3 to 12nm. The optical properties of the formed pairs of unequal-sized QD's with clearly discernible rnground-state transition energy depend on the spacer thickness. When the spacer layer of GaAs is thin enough,rnonly one photoluminescence peak related to the large QD ensemble has been observed as a result of strong rnelectronic coupling in the InAs QD pairs. The results provide evidence for nonresonant energy transfer from the rnsmaller QDs in the second layer to the larger QD's in the first layer in such an asymmetric QD pair.

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  • 来源
    《中国物理快报:英文版》 |2000年第8期|615-616|共2页
  • 作者单位

    National Laboratory for Superlattices and Microstructures, Institute of Semiconductors,rnChinese Academy of Sciences, Beijing 100083;

    Permanent address: Department of Physics, Qufu Normal University, Qufu, Shandong Province, 273165.;

    National Laboratory for Superlattices and Microstructures, Institute of Semiconductors,rnChinese Academy of Sciences, Beijing 100083;

    National Laboratory for Superlattices and Microstructures, Institute of Semiconductors,rnChinese Academy of Sciences, Beijing 100083;

    National Laboratory for Superlattices and Microstructures, Institute of Semiconductors,rnChinese Academy of Sciences, Beijing 100083;

    National Laboratory for Superlattices and Microstructures, Institute of Semiconductors,rnChinese Academy of Sciences, Beijing 100083;

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