首页> 中文期刊> 《中国物理快报:英文版》 >Characteristics of Sb6Te4/VO2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

Characteristics of Sb6Te4/VO2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

         

摘要

The Sb6Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail.Compared with Sb6Te4,Sb6Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance,indicating better thermal stability and less power consumption.Also,Sb6Te4/VO2 has a broader energy band of 1.58 e V and better data retention (125℃ for 10 y).The crystallization is suppressed by the multilayer interfaces in Sb6Te4/VO2 thin film with a smaller rms surface roughness for Sb6Te4/VO2 than monolayer Sb4Te6.The picosecond laser technology is applied to study the phase change speed.A short crystallization time of 5.21 ns is realized for the Sb6Te4 (2 nm)/VO2 (8 nm) thin film.The Sb6Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.

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  • 来源
    《中国物理快报:英文版》 |2018年第9期|53-56|共4页
  • 作者单位

    School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000;

    State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027;

    Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences, Beijing 100029;

    School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213000;

    State Key Laboratory of Optoelectronic Materials and Technology, School of Physics, Sun Yat-Sen University,Guangzhou 510275;

    State Key Laboratory of Optoelectronic Materials and Technology, School of Physics, Sun Yat-Sen University,Guangzhou 510275;

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