首页> 中文期刊> 《中国物理快报:英文版》 >Improved Performance of a Wavelength-Tunable Arrayed Waveguide Grating in Silicon on Insulator

Improved Performance of a Wavelength-Tunable Arrayed Waveguide Grating in Silicon on Insulator

         

摘要

The improved performance of a wavelength-tunable arrayed waveguide grating (AWG) is demonstrated,including the crosstalk,insertion loss and the wavelength tuning efficiency.A reduced impact of the fabrication process on the AWG is achieved by the design of bi-level tapers.The wavelength tuning of the AWG is achieved according to the thermo-optic effect of silicon,and uniform heating of the silicon waveguide layer is achieved by optimizing the heater design.The fabricated AWG shows a minimum crosstalk of 16 dB,a maximum insertion loss of 3.91 dB and a wavelength tuning efficiency of 8.92 nm/W,exhibiting a ~8 dB improvement of crosstalk,~2.1 dB improvement of insertion loss and ~5 nm/W improvement of wavelength tuning efficiency,compared to our previous reported results.

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  • 来源
    《中国物理快报:英文版》 |2019年第5期|36-39|共4页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

    Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;

    Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education,School of Chemistry, Beihang University, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

    Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;

    Key Laboratory of Bio-inspired Smart Interfacial Science and Technology of Ministry of Education,School of Chemistry, Beihang University, Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083;

    Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049;

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  • 正文语种 eng
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