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Simulation of Synergism Effect Using Temperature Switching Irradiation on Bipolar Comparator

         

摘要

The synergism effect of total ionizing dose (TID) on a single event transient (SET) in a bipolar comparator is investigated.Experimental results show that the shapes of the SET are considerably influenced by the TID accumulated in low dose rates.The variation tendency of SET shapes can be accurately simulated by temperature switching irradiation.The mechanism of this synergism effect is also analyzed in brief via the operating schematic of a comparator.After the accumulation of 100 krad(Si),the lower tendency of negative SET can be attributed to the degeneration ofβ.The change tendency of a positive SET,either lower or higher,is dependent on the load condition that limits the output range of the comparator.

著录项

  • 来源
    《中国物理快报:英文版》 |2018年第8期|96-99|共4页
  • 作者单位

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011;

    Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011;

    University of Chinese Academy of Sciences, Beijing 100049;

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  • 正文语种 eng
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