首页> 中文期刊> 《中国物理快报:英文版》 >Tunable Bistability in the Goos-H(a)nchen Effect with Nonlinear Graphene

Tunable Bistability in the Goos-H(a)nchen Effect with Nonlinear Graphene

         

摘要

We present a planar model system of a silica covered with a monolayer of nonlinear graphene to achieve a tunable Goos-H(a)nchen (GH) shift in the terahertz range.It is theoretically found that the transition between a negative shift and a large positive one can be realized by altering the intensity of incident light.Moreover,by controlling the chemical potential of graphene and the incident angle of light,we can further control the tunable GH shift dynamically.Numerical simulations for GH shifts based on Gaussian waves are in good agreement with our theoretical calculations.

著录项

  • 来源
    《中国物理快报:英文版》 |2019年第6期|33-36|共4页
  • 作者单位

    School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006;

    Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006;

    School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006;

    Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006;

    School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006;

    Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006;

    School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006;

    Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006;

    School of Physical Science and Technology & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006;

    Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006;

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  • 正文语种 eng
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