A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High-k Dielectric Multilayer Structure

著录项

• 来源
  《中国物理快报：英文版》 |2010年第6期|254-257|共4页
• 作者

  LV Shi-Cheng; GE Zhong-Yang; ZHOU Yue; XU Bo; GAO Li-Gang; YIN Jiang; XIA Yi-Dong; LIU Zhi-Guo;

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• 作者单位

  Department of Physics and National Laboratory of Solid State Microstructurcs Nanjing University Nanjing 210093;

  Department of Materials Science and Engineering and National Laboratory of Solid State Microstructures Nanjing University Nanjing 210093;

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• 原文格式 PDF
• 正文语种 chi
• 中图分类
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