首页> 中文期刊> 《中国物理快报:英文版》 >Field-and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions

Field-and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions

         

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  • 来源
    《中国物理快报:英文版》 |2020年第11期|98-103|共6页
  • 作者单位

    National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China;

    National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China;

    Centre for Integrated Spintronic Devices School of Electronics and Information Hangzhou Dianzi University Hangzhou 310018 China;

    National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China;

    Centre for Integrated Spintronic Devices School of Electronics and Information Hangzhou Dianzi University Hangzhou 310018 China;

    National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China;

    National Laboratory of Solid State Microstructures School of Physics and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China;

    York-Nanjing Joint Center (YNJC) for Spintronics and Nanoengineering School of Electronics Science and Engineering Nanjing University Nanjing 210093 China;

    Centre for Integrated Spintronic Devices School of Electronics and Information Hangzhou Dianzi University Hangzhou 310018 China;

    Centre for Integrated Spintronic Devices School of Electronics and Information Hangzhou Dianzi University Hangzhou 310018 China;

    Key Laboratory of Spintronics Materials Devices and Systems of Zhejiang Province Hangzhou 311305 China;

    Key Laboratory of Spintronics Materials Devices and Systems of Zhejiang Province Hangzhou 311305 China;

    Key Laboratory of Spintronics Materials Devices and Systems of Zhejiang Province Hangzhou 311305 China;

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  • 正文语种 eng
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