Electrical Activity of Frank Partial Dislocations and the influence of Metallic Impurities in Czochralski-Grown Silicon

著录项

• 来源
  《中国物理快报：英文版》 |1997年第6期|P.436-439|共4页
• 作者

  沈波; 杨凯; 陈鹏; 张荣; 施毅; 郑有炓; T.Sekiguchi; K.Sumino;

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• 作者单位

  Department of Physics Institute of Solid Solid State Physics Nanjing University Nanjing 210093;

  Department of Physics Institute of Solid Solid State Physics Nanjing University Nanjing 210093;

  Department of Physics Institute of Solid Solid State Physics Nanjing University Nanjing 210093;

  Department of Physics Institute of Solid Solid State Physics Nanjing University Nanjing 210093;

  Department of Physics Institute of Solid Solid State Physics Nanjing University Nanjing 210093;

  Department of Physics Institute of Solid Solid State Physics Nanjing University Nanjing 210093;

  Institute for Materials Research Tohoku University Sendai 980 Japan;

  Institute for Materials Research Tohoku University Sendai 980 Japan;

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• 原文格式 PDF
• 正文语种 chi
• 中图分类 半导体物理学;
• 关键词

  temperature.; technique.; Czochralski;