A Novel Ge Nanostructure Exhibiting Visible Photoluminescence

JIANG Jiangong; CHEN Kunji; HUANG Xinfan; FENG Duan; SUN Dayou

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A Novel Ge Nanostructure Exhibiting Visible Photoluminescence

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The a-Ge:H/a-SiNx:H multiquantiim-well structures were prepared by a computercon trolied plasma,enhanced clieinicaJ vapor deposition method and tAeii crystallized by At+laser annealing technique.When the Ge well-layer thickness was reduced to 30 A,the crystallized sample showed a roojn temperature pLotoluininescence with a peak at about 2.26 eV.Mennwhile some significant characteristics of such a novel Ge na.nostructiire were also revealed by x-ray difEraction.Possible mechanisms of this visible PL phenomenon have been discussed.

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《中国物理快报：英文版》 |1993年第10期|P.630-633|共4页
作者
JIANG Jiangong; CHEN Kunji; HUANG Xinfan; FENG Duan; SUN Dayou;
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作者单位

National Laboratory of Solid State Microstructures&nd Department of Physics Nanjing University Nanjing 210008National"ASIC System" Engineering and Technology Research Centre Southeast University Nanjing 210018(mailing address);

National Laboratory of Solid State Microstructures&nd Department of Physics Nanjing University Nanjing 210008;

National Laboratory of Solid State Microstructures&nd Department of Physics Nanjing University Nanjing 210008;

National Laboratory of Solid State Microstructures&nd Department of Physics Nanjing University Nanjing 210008;

National"ASIC System" Engineering and Technology Research Centre Southeast University Nanjing 210018(mailing address);

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原文格式 PDF
正文语种 chi
中图分类金属学与热处理;
关键词
technique; structure; annealing;

A Novel Ge Nanostructure Exhibiting Visible Photoluminescence

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