Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure

LUO Ke-jian; ZHENG Hou-zhi; ZHANG Ting; LI Cheng-fang; YANG Xiao-ping; ZHANG Peng-hua; ZHANG Wei; TIAN Jin-fa

首页> 中文期刊> 《中国物理快报：英文版》 >Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure

Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure

开具论文收录证明 >>

期刊封面封底目录下载 >>

文献代查 >>

页面导航

摘要
著录项
相关主题

摘要

Charge build-up process in the emitter of a double-barrier resonant tunneling structure is studied by using photoluminescence spectroscopy.Clear evidence is obtained that the charge accumulation in the emitter keeps almost constant with bias voltages in the resonant regime,while it increases remarkably with bias voltages beyond resonant regime.The optical results are in good agreement with the electrical measurement.It is demonstrated that the band gap renormalization plays a certain role in the experiment.

著录项

来源
《中国物理快报：英文版》 |1996年第9期|P.707-710|共4页
作者
LUO Ke-jian; ZHENG Hou-zhi; ZHANG Ting; LI Cheng-fang; YANG Xiao-ping; ZHANG Peng-hua; ZHANG Wei; TIAN Jin-fa;
展开▼
作者单位

National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

展开▼
原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
measurement; emitter; resonant;

Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure

摘要

著录项

相关主题

期刊订阅