首页> 中文期刊> 《中国物理快报:英文版》 >PHOTO-INDUCED REVERSIBLE CHANGE OF URBACH EDGE IN HYDROGENATED AMORPHOUS SILICON

PHOTO-INDUCED REVERSIBLE CHANGE OF URBACH EDGE IN HYDROGENATED AMORPHOUS SILICON

         

摘要

Photoconductivity spectra temperature dependence combining with transmission measurements have been formed on hydrogenated amorphous silicon.After exposure by AM1 light a reversible increase of 6%of the Urbach parameter E0(T,X)has been observed.This is a direct evidence for the fact that photo-induced changes in a-Si:H create not only metastable defects but also affect the topological disorder.

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