We have tested the temperature and incident flux dependence of photoconductivity and dual beam infrared photoconductivity spectra of a-Si:H samples in annealed states A^(* ) and A, and the light soaked states B1 and B2;and observed that they were different for the 4 different states. We believe that light exposures create two kinds of centers, which we name α and τ. A model is suggested to explain the experimental results.
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