STUDY OF THE QUALITY OF GaAs THIN FILM ON Si SUBSTRATE BY X-RAY DIFFRACTION METHOD

LI Chaorong; MAZhenhong; CUI Shufan; ZHOU Junming; Wang Yutian

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STUDY OF THE QUALITY OF GaAs THIN FILM ON Si SUBSTRATE BY X-RAY DIFFRACTION METHOD

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Different diffraction lattice planes were used to investigate the quality profiles of molecular beam epitaxy epi-layer GaAs films on Si substrate by X-ray double crystal diffraction method.As the X-ray incident angle increasing,the full width of half maximum(FWHM)also increases,that is,the quality getting worse in deeper layer.Therefore a clear figure of the degree of perfectness along the depth can be shown.The sample with strain surerlattice buffer layer has better quality than that without,especially in the surface lamella.

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来源
《中国物理快报：英文版》 |1990年第7期|P.308-311|共4页
作者
LI Chaorong; MAZhenhong; CUI Shufan; ZHOU Junming; Wang Yutian;
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作者单位

Institute of Physics Academia Sinica Beijing 100080;

Institute of Physics Academia Sinica Beijing 100080;

Institute of Physics Academia Sinica Beijing 100080;

Institute of Physics Academia Sinica Beijing 100080;

Institute of Semiconductor Academia Sinica Beijing 100080;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
lattice; layer; RATE;

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STUDY OF THE QUALITY OF GaAs THIN FILM ON Si SUBSTRATE BY X-RAY DIFFRACTION METHOD

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