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《中国物理快报：英文版》
>PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS/AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY
PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS/AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY
Room temperature photoreflectance were made on a selectively doped GaAs/n-Al_(X)Ga_(1-X)As two-dimensional electron gas grown by molecular beam epitaxy(MBE).The lineshapes can be made fit by Aspnes''theory,and the results explained with a simple model.
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