Microstructural Characterization of Epitaxial GaAs on Separation-by-Implanted-Oxygen Substrates

著录项

• 来源
  《中国物理快报：英文版》 |1991年第10期|P.529-532|共4页
• 作者

  ZHU Wenhua; LIN Chenglu; NI Rushan; LI Aizhen; ZOU Shichang; P.L.F.Hemment;

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• 作者单位

  Ion Beam Laboratory Shanghai Institute of Metallurgy Academia Sinica Shanghai 200050;

  Ion Beam Laboratory Shanghai Institute of Metallurgy Academia Sinica Shanghai 200050;

  Ion Beam Laboratory Shanghai Institute of Metallurgy Academia Sinica Shanghai 200050;

  Ion Beam Laboratory Shanghai Institute of Metallurgy Academia Sinica Shanghai 200050;

  Ion Beam Laboratory Shanghai Institute of Metallurgy Academia Sinica Shanghai 200050;

  Department of Electronic and Electric&l Engineering University of Surrey Guildford GU25HX United Kingdom;

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• 收录信息 中国科学引文数据库(CSCD);
• 原文格式 PDF
• 正文语种 chi
• 中图分类 半导体技术;
• 关键词

  Oxygen; sectional; separation;