Photoluminescence Properties of a-SiC:H Films Grown by Plasma Enhanced Chemical Vapor Deposition from SiH_(4)+C_(2)H_(2) Gas Mixtures

刘益春; 刘春光; 陈大伟; 刘玉学; 白玉白; 李铁津

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Photoluminescence Properties of a-SiC:H Films Grown by Plasma Enhanced Chemical Vapor Deposition from SiH_(4)+C_(2)H_(2) Gas Mixtures

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The films of a-SiC:H were deposited by plasma enhanced chemical vapor deposition system from SiH_(4)+C_(2)H_(2) gas mixtures.The C-rich a-SiC:H films were easily obtained by using C_(2)H_(2) gases due to the low dissociation energy of C_(2)H_(2) molecule in the plasma.Thus,the carbon was effectively incorporated into a-Si:H network.Although the defect state densities were proportional to carbon content in a-SiC:H films,the photoluminescence intensities were not directly related with defect density,yet increased with the carbon content increasing.The infrared spectra indicated that CHn groups as clusters were incorporated mainly into a-SiC:H network.The little correlation of the PL integrated intensity with defect state density suggested that luminescence was associated with clusters as a largely intracluster process.

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《中国物理快报：英文版》 |1998年第11期|P.837-839|共3页
作者
刘益春; 刘春光; 陈大伟; 刘玉学; 白玉白; 李铁津;
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作者单位

Institute of Theoretical Physics Northeast Normal University Changchun 130024;

Institute of Theoretical Physics Northeast Normal University Changchun 130024;

Institute of Theoretical Physics Northeast Normal University Changchun 130024Department of Preventive Medicine Bethune University of Medical Sciences Changchun 130024;

Institute of Theoretical Physics Northeast Normal University Changchun 130024;

Department of Chemistry Jilin University Changchun 130023;

Department of Chemistry Jilin University Changchun 130023;

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原文格式 PDF
正文语种 chi
中图分类固体物理学;
关键词
process; defect; incorporated;

Photoluminescence Properties of a-SiC:H Films Grown by Plasma Enhanced Chemical Vapor Deposition from SiH_(4)+C_(2)H_(2) Gas Mixtures

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