Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer

赵一广; 程磊; 黄显玲; 张国义; 李景; 杨志坚

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Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer

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Using solid-phase regrowth technique,Pd/Ge contact has been made on the GaN layer,and very good ohmic behavior was observed for the contact.The Photoluminescence(PL)spectra for different structures formed by the Pd/Ge contact,GaN layer,sapphire substrate,and mirror were studied,and a defect-assisted transition was found at 450nm related to Ge impurity.The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.

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《中国物理快报：英文版》 |1998年第9期|P.677-679|共3页
作者
赵一广; 程磊; 黄显玲; 张国义; 李景; 杨志坚;
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作者单位

Department of Physics Peking University Beijing 100871National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

Department of Physics Peking University Beijing 100871National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

Department of Physics Peking University Beijing 100871National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083;

Department of Physics Mesoscopic Physics Laboratory Peking University Beijing 100871;

Department of Physics Mesoscopic Physics Laboratory Peking University Beijing 100871;

Department of Physics Mesoscopic Physics Laboratory Peking University Beijing 100871;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
GaN; sapphire; ohmic;

Ge Related-Defect Energy and Microcavity Effect in GaN Epitaxial Layer

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