Precipitates in undoped GaN epilayers with specular surfaces grown on sapphire substrates were imaged by super high-resolution electron microscopy(HREM)and analyzed by energy-dispersive x-ray spectrometry(EDXS).The HREM images of the precipitates appeared more or less hexagonal intersection with several ten-nanometer large,which is the same as that of the V-shape defects.The EDXS spectra of the precipitates were mainly composed of the characteristic x-rays of oxygen,carbon,and gallium elements.The results suggest that the precipitates nucleate at the pinholes of the V-shape cavities and grow as the GaN growth.
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