Luminescent Properties of Nano-crystalline Silicon Films Embedded in SiO_(2)

林璇英; 林揆训; 姚若河; 石旺舟; 李美亚; 徐楚迎; 余运鹏; 傑厚蕴; 徐严平

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Luminescent Properties of Nano-crystalline Silicon Films Embedded in SiO_(2)

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Nano-crystalline silicon(nc-Si)films embedded in SiO2 exhibited strong visible light luminescence at room temperature.The energies of photoluminescence peak were found to be more than 1.9eV and the peaks shifted to higher energies when nano-Si films were post-oxidized.The photoluminescence intensity depended significantly on the size of the grains and the characteristics of the oxidized surface.Microcrystalline silicon grains of 2-3nm average size and radiation recombination centers located on the nanoscale silicon grain surfaces and located in the Si oxide layers are considered to be the source of the visible luminescence.

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来源
《中国物理快报：英文版》 |1999年第9期|P.670-671|共2页
作者
林璇英; 林揆训; 姚若河; 石旺舟; 李美亚; 徐楚迎; 余运鹏; 傑厚蕴; 徐严平;
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作者单位

Department of Physics Shantou University Shantou 515063;

Institute of Material Science and Technology Shantou University Shantou 515063;

Department of Physics Shantou University Shantou 515063;

Institute of Material Science and Technology Shantou University Shantou 515063;

Institute of Material Science and Technology Shantou University Shantou 515063;

Department of Physics Shantou University Shantou 515063;

Department of Physics Shantou University Shantou 515063;

Department of Physics Shantou University Shantou 515063;

Test Center Shantou University Shantou 515063;

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原文格式 PDF
正文语种 chi
中图分类固体物理学;
关键词
temperature.; surface.; crystalline;

Luminescent Properties of Nano-crystalline Silicon Films Embedded in SiO_(2)

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