A quantum well controller(QWC)consisting of a direct-gap/indirect-gap quantum well and a doping interface is proposed to control the dynamic operation of the Gunn active layer.Through the Monte Carlo simulation a new relaxation mode for this new device is found.The oscillation and amplification behavior of the Gunn active layer under the control of the QWC is investigated theoretically and experimentally.All work demonstrates the great control capacity of the QWC and provides a new way to improve the performance of semiconductor devices.A new oscillation diode made of the QWC and a Gunn active layer has been designed and fabricated.In the 8 mm band the highest pulse output power of these diodes is 2.55 W and the highest conversion efficiency is 18%.
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National Laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing 100083Nanjing Electronic Devices Institute Nanjing 210016;
