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>Valence offsets of ternary alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As
Valence offsets of ternary alloy heterojunctions In_xGa_(1-x)As/In_xAl_(1-x)As
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摘要
The ternary alloy heterojunctions InxGa1-xAs/InxAl1-xAs are important materialswhich have been widely used in microwave and photoelectric devices.The alloy hetero-junctions InxGa1-xAs/InxAl1-xAs（x=0.3）have great potential use in high electron mobili-ty transistors（HEMTs）,heterostructure insulated-gate FFTs（HIGFETs）and resonant tun-neling diodes（RTDs）.When x rises to 0.53,InxGa1-xAs/InxAl1-xAs can be widely used inthe high-speed electronic devices.The valence-band offset（the value of ΔEv
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