Design Platform Development Division;
Renesas Electronics Corporation;
Kodaira;
Japan;
Faculty of Engineering;
Osaka Institute of Technology;
Osaka;
Japan;
Faculty of Information Science and Technology;
Osaka Institute of Technology;
Hirakata;
Japan;
Graduate School of Natural Science;
Kanazawa University;
Kanazawa;
Japan;
SoC Software Platform Division;
Renesas Electronics Corporation;
Itami;
Japan;
Static; Random; Access; Memory; (SRAM); Write; Noise; Margin; (WNM); Vth; Fluctuation; Variance; WNM; Distribution;