In this article,a new method of extraction carrier lifetime for IGBT n^-layers has been proposed based on an IGBT subcircuit model includes a detailed ambipolar transport analysis of bipolar transistor portion and does not assume the quasi_static conditions.The IGBT n^- layer conductivity modulated resistor is effectively equivalent by a VCR(Voltage Controlled Resistor),the model is fully sipice compatible and can be used to accurately predict the IGBT I-V characteristics,carrier lifetime etc.
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