Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits

Amadou Diao; Ndeye Thiam; Martial Zoungrana; Gokhan Sahin; Mor Ndiaye; Grégoire Sissoko

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Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits

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In this paper, a theory on the determination of the diffusion coefficient of excess minority carriers in the base of a silicon solar cell is presented. The diffusion coefficient expression has been established and is related to both frequency modulation and applied magnetic field;the study is then carried out using the impedance spectroscopy method and Bode diagrams. From the diffusion coefficient, we deduced the diffusion length and the minority carriers’ mobility. Electric parameters were derived from the diffusion coefficient equivalent circuits.

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《凝固态物理国际期刊（英文）》 |2014年第2期|84-92|共9页
作者
Amadou Diao; Ndeye Thiam; Martial Zoungrana; Gokhan Sahin; Mor Ndiaye; Grégoire Sissoko;
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作者单位

Laboratory of Environment Materials;

Physics Department;

Training and Research Unit in Applied Science;

University of Ouagadougou;

Ouagadougou;

Burkina Faso;

Laboratory of Semiconductors and Solar Energy;

Physics Department;

Faculty of Science and Technology;

University Cheikh Anta Diop;

Dakar;

Sénégal;

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原文格式 PDF
正文语种 chi
中图分类数学;
关键词
Solar; Cell; Magnetic; Field; Frequency; Modulation; Diffusion; Coefficient;

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Diffusion Coefficient in Silicon Solar Cell with Applied Magnetic Field and under Frequency: Electric Equivalent Circuits

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