Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

Mamadou Lamine Ba; Ndeye Thiam; Moustapha Thiame; Youssou Traore; Masse Samba Diop; Mamour Ba; Cheikh Tidiane Sarr; Mamadou Wade; Gregoire Sissoko

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Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

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In this work, we propose a method to determinate the optimum thickness of a monofacial silicon solar cell under irradiation. The expressions of back surface recombination velocity depending the damage coefficient (kl) and irradiation energy (øp) are established. From their plots, base optimum thickness is deduced from the intercept points of the curves. The short-circuit currents Jsc0 and Jsc1 corresponding to the recombination velocity Sb0 and Sb1 are determinated and a correlation between the irradiation energy, the damage coefficient and optimum thickness of the base is established.

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《电磁分析与应用期刊（英文）》|2019年第10期|173-185|共13页
作者
Mamadou Lamine Ba; Ndeye Thiam; Moustapha Thiame; Youssou Traore; Masse Samba Diop; Mamour Ba; Cheikh Tidiane Sarr; Mamadou Wade; Gregoire Sissoko;
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作者单位

Laboratory of Sciences and Techniques of Water and Environment, Polytechnic School of Thiès, Thiès, Senegal;

Laboratory of Semiconductors and Solar Energy, Physics Department, Faculty of Science and Technology, University Cheikh Anta Diop, Dakar, Senegal.;

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原文格式 PDF
正文语种 chi
中图分类世界工业经济;
关键词
Silicon; Solar; Cell; Irradiation; Recombination; Velocity; Base; Thickness;

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Base Thickness Optimization of a (n+-p-p+) Silicon Solar Cell in Static Mode under Irradiation of Charged Particles

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