A new configuration realizing water quality monitoring device using ISFET involving low power CMOS Integrated “Ion Sensitive Field Effect transistor (ISFET) – Operational Amplifier is presented. The study’s main focus is on simulation of power and performance analysis of ISFET device, which is used for water quality monitoring. This approach can improve calibration of device to a fairly wide range without the use of a high speed digital processor. The conventional device has a drawback of slow slew rate but in this novel design, the device has a better slew rate. A new slew rate enhancement (SRE) incorporatedinto a ISFET, which does not affect the small signal frequency response. The functionality of the circuit is tested using Tanner simulator version 15 for a 70nm CMOS process model also the transfer function realization is done on MATLAB R2011a version, the Very high speed integrated circuit Hardware description language(VHDL) code for the same scheme is simulated on Xilinx ISE 10.1 and various simulation results are obtained. Simulation results are included to demonstrate the results.
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