采用射频磁控溅射法在ITO玻璃表面沉积了一层15nm左右的SnO2薄膜.利用霍尔效应测试仪、四探针电阻测试仪、场发射电子显微镜及紫外-可见-近红外光谱仪分析了所制薄膜的电学性质、表面形貌和光学性质.结果表明,在300-600℃退火后镀有SnO2覆盖层的ITO(SnO2/ITO)薄膜具有相对好的热学稳定性.在600℃退火后,ITO薄膜的方阻和电阻率分别为88.3Ω/□和2.5×10-3Ω·cm,而此时,SnO2/ITO薄膜的方阻和电阻率仅为43.8Ψ/□和1.2× 10-3Ω·cm.最后,阐述了SnO2覆盖层提高ITO薄膜热稳定性的机制.%SnO2 thin films were prepared on ITO glass substrates by radio frequency magnetron sputtering method. The electrical properties, surface topography and optical properties of the prepared films were investigated by hall effect measurements system, four point probe instrument, field emission scanning electron microscopy (FE-SEM) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer. The results show that the ITO films covered with the SnO2 films (SnO/TO) show remarkable improvement in thermal stability for subsequent heat treatments in the temperature range from 300 to 600 'C. After annealing at 600 'C, the sheetresistance and resistivity of ITO film are 88.3 Ω/□ and 2.5×10-3Ω · cm, respectively, while the sheetresistance and resistivity of SnO2/ITO film are 43.8 n/a and 1.2×10-3 Ω ·cm. In the end, the mechanism of enhanced thermal stability by SnO2 overlayer is expounded.
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