采用化学法分别去除GH4169合金及TC4合金基材表面的WC–Co等离子喷涂层。通过正交试验对去除液配方和处理温度进行优化。GH4169基WC–Co涂层的最优去除工艺条件为：HNO330 mL/L，H2O2550 mL/L，处理温度35°C。TC4合金基WC–Co涂层的最优去除工艺条件为：HNO370 mL/L，H2O2550 mL/L，处理温度30°C。采用上述工艺可有效去除GH4169和TC4表面的WC–Co涂层，对基体无明显的化学腐蚀，不会导致基体吸氢。1 L去除液可处理约10 dm20.3 mm厚的WC–Co涂层。%The plasma sprayed WC–Co coatings on surface of GH4619 and TC4 alloys were removed by chemical method. The removal bath composition and treatment temperature were optimized through orthogonal test. The optimal process conditions are HNO3 30 mL/L, H2O2 550 mL/L, and treatment temperature 35 °C for removing WC–Co coating from GH4619 alloy substrate, and HNO3 70 mL/L, H2O2 550 mL/L, and treatment temperature 30 °C for TC4 substrate. The WC–Co coatings on the surfaces of both GH4169 and TC4 can be removed effectively by using the given processes. There is no obvious chemical corosion and hydrogen absorption phenomena on the substrates during removal processing. 1 L removal solution can be used to treat about 1 dm2 of 0.3 mm-thick WC–Co coating.
展开▼
