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Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers

         

摘要

We report on a study of terahertz (THz) generation using implanted InGaAs photomixers and multi-wavelength quantum dot lasers. We carry out InGaAs materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched InGaAs grown on InP. Under a 1.55 µm multi-mode InGaAs/InGaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.

著录项

  • 来源
    《安徽地质》 |2012年第1期|10-13|共4页
  • 作者单位

    Institute for Microstructural Sciences, National Research Council, 0ttawa K1A 0R6, Canada;

    Institute for Microstructural Sciences, National Research Council, 0ttawa K1A 0R6, Canada;

    Institute for Microstructural Sciences, National Research Council, 0ttawa K1A 0R6, Canada;

    Institute for Microstructural Sciences, National Research Council, 0ttawa K1A 0R6, Canada;

    Institute for Microstructural Sciences, National Research Council, 0ttawa K1A 0R6, Canada;

    Institute for Microstructural Sciences, National Research Council, 0ttawa K1A 0R6, Canada;

    Department of Electrical Engineering, Ecole Polytechnique, Montr´eal H3T 1J4, Canada;

    D´epartement de physique, Universit´e de Montr´eal, Montr´eal H3C 3J7, Canada;

    Department of Electrical Engineering, Concordia University, Montreal H3G 1M8, Canada;

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