In this paper the vanishing Debye length limit (space charge neutral limit) of the bipolar drift-diffusionequations modelling insulated semiconductor devices with p-n junctions (i.e. with a fixed bipolar backgroundcharge) is studied. The limit solution of the drift-diffusion equations is also presented here.%研究了模拟带p-n结的绝缘半导体器件的双极飘流扩散方程组的德拜长度、消失极限(拟中性极限).同时给出了扩散方程组的极限解.
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