The factors affecting the voltage transfer efficiency of Blumlein pulse forming networks (PFNs) based on photo-conductive semiconductor switch (PCSS) were preliminarily studied in experiment to get rectangle high voltage pulses on high impedance loads with high energy transfer efficiency and high repetition rate. The Blumlein-PFN is composed of the ceramic capacitor, aluminum strip and GaAs-PCSS. The Blumlein-PFN's impedance is 7. 8 Ω with an electric length of 32. 6 ns. The relations of voltage transfer efficiency to PCSS electric field and laser energy were studied on a matched load. Experiment results shows that high on-resistance is the main factor affecting the voltage transfer efficiency. When the electric field is 25. 1 kV/cm, the efficiency is 75. 6% with an on-resistance of 2. 88 Ω at a laser energy of 3. 5 mJ and 83. 2% with an on-resistance of 1. 89 Ω at a laser energy of 30. 4 mJ.%为了在高阻负载上获得高效率的重复频率平顶高压脉冲输出,开展了影响基于光导开关的Blumlein型脉冲形成网络电压传输效率因素的初步实验研究.以陶瓷电容、铝条和GaAs光导开关构成全固态Blumlein型脉冲形成网络(BPFN),采用气体间隙进行了设计参数的验证实验,在匹配负载上研究了光导开关工作场强、激光触发能量与BPFN电压转换效率的关系.设计的BPFN阻抗7.8Ω,电长度32.6 ns,实验表明光导开关较高的导通电阻是影响PCSS-BPFN电压传输效率的主要因素.当触发激光能量30.4 mJ,工作场强25.1 kV/cm时,获得电压效率83.2％,相应最小导通电阻1.89 Ω；在触发激光能量3.5 mJ时,为了使阻抗为7.8Ω的BPFN在匹配负载上达到75％以上电压传输效率,应至少使光导开关工作场强为25.1 kV/cm,相应最小导通电阻2.88 Ω.
展开▼
