To avoid the smile effect, which seriously restricts the linewidth narrowing of high power diode laser for alkali vapor laser, a 780 nm single-broad-area high power diode laser was studied. An output beam with 11. 5 W power, 61% external cavity efficiency was obtained with the optimized Littman configuration, when the laser run freely at 19 W. When the beam transmitted through a 25 cm long, 110 ℃ Rb vapor cell with 80 kPa ethane, 96. 7% power was absorbed. The theory calculation supports the 0.03 nm linewidth (15 GHz spectral width) derived from experimental results.%笑脸效应严重制约大功率半导体激光器输出谱宽压窄.为避免笑脸效应,以中心波长780 nm单宽面源大功率半导体激光器为研究对象,利用利特曼外腔结构,优化外腔参数,在激光器自由运转19W时,获得11.5W、外腔效率达61％的窄线宽输出.将窄线宽输出激光通过长 25 cm,80 kPa乙烷、110℃的铷池,96.7％的泵浦光被吸收,通过与理论模型对比,推断半导体激光器的输出谱宽为15 GHz(0.03 nm).
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