Thin films of silicon carbide nitride (SiCN) were prepared on (111) oriented silicon substrates by pulsed high-energy density plasma (PHEDP). The evolution of the chemical bonding states between silicon, nitrogen and carbon was investigated as a function of discharge voltage using X-ray photoelectron spectroscopy. With an increase in discharge voltage both the C 1s and N 1s spectra shift to lower binding energy due to the formation of C-Si and N-Si bonds. The Si-C-N bonds were observed in the deconvolved C 1s and N 1s spectra. The X-ray diffractometer (XRD) results show that there were no crystals in the films. The thickness of the films was approximately 1-2 μm with scanning electron microscopy (SEM).
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机译：The preparation and the in-vitro pharmacodynamics study of the intracapsular sustained-release preparations for the prevention of posterior capsule opacification
机译：How the Group Leaders of Lesson Preparation Groups Facilitate Group Learning and Reflective Practice in Chinese Public High Schools =中国公立高中的备课组长是如何引领团队学习和反思性实践的？
机译：神父市政厅，宗教自由和天主教传统。真实地狱中的均一教义发展案例，阿巴耶·圣马德琳（Les Barroux），第二版。修订和扩充，1998年，T。I，系统学，第一期：Preparations，LX + 466页。第二期：成果，278页。 T. II，编年史，总理专着：资料来源，第594页。第二期：所附文件，430页。 T. III，按字母顺序，第一期：参考书目，552页。第二期：一般分析索引，540页。
