首页> 中文期刊> 《吉林师范大学学报(自然科学版)》 >利用双发光层结构提高 N-BDAVBi 掺杂器件的效率

利用双发光层结构提高 N-BDAVBi 掺杂器件的效率

         

摘要

制备了基于 N-BDAVBi 的高效率双发光层蓝色有机电致发光器件(OLED),器件中将蓝色荧光染料 N-BDAVBi 作为客体发光材料分别掺入主体材料 TCTA 和 TPBi 中,器件结构为 ITO/ m-MTDATA(40 nm)/ NPB(10 nm)/ TCTA:N-BDAVBi(15 nm)/ TPBi:N-BDAVBi(15 nm)/ TPBi(30 nm)/ LiF(0.6 nm)/ Al(150 nm),最大电流效率达到8.44 cd/ A,CIE 色坐标为(0.176,0.314),并且在12 V 的电压下,亮度最大达到11860 cd/ m2,分别是单发光层结构器件的1.85倍和1.2倍.器件性能提高主要归因于双发光层扩大了载流子复合区域,主客体间的Forster 能量转移.%The high-efficiency and double emitting layers blue light emitting devices was fabricated in the paper. In this device,blue fluorescent material N-BDAVBi was guest which was doped into two host material of TCTA and TPBi. The device structure included indium tin oxide glass(ITO)/ m-MTDATA(40 nm)/ NPB(10 nm)/TCTA:N-BDAVBi(15 nm)/ TPBi:N-BDAVBi(15 nm)/ TPBi(30 nm)/ LiF(0. 6 nm)/ Al(150 nm). The maximum luminance efficiency was 8. 44 cd / A,which was 1. 85 times and 1. 2 times of the single light-emitting layer structure devices. CIE colour was(0. 176,0. 314). The maximum luminance of more than 20 620 cd / m2 had been achieved at 12 V. The reason of high capability was the expansion of the recombination zone in double emission layers structure,and fully Forster energy transfer in blue OLEDs.

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