首页> 中文期刊> 《电子显微学报》 >溅射和激光淀积的ZnO多晶薄膜的结构和发光性质

溅射和激光淀积的ZnO多晶薄膜的结构和发光性质

         

摘要

我们分别通过直流反应溅射及脉冲激光淀积法制备了ZnO多晶薄膜.X射线衍射结果显示出薄膜的c轴取向.原子力显微镜证实薄膜的多晶结构.两种方法制备的ZnO在光子激发下都发射较强的带边荧光.绿色荧光未被观察到.激光淀积在(001)硅表面的ZnO的发光源自"自由激子"辐射.激光淀积在(0001)氧化铝晶体表面的ZnO的发光机制则在相当宽的激发强度范围内都呈现出电子-空穴等离子体(electron-hole plasma)的复合特性.%ZnO polycrystalline films were grown on Si(001 ) and Al2 O3 (0001) substrates by reactive sputtering and pulsed laser deposition in oxygen ambient. X-ray diffraction graphs showed c-axis orientation. Atomic force microscopy showed polycrystalline structure of films. Annealing substantially improved the grain size and c-axis orientation. Samples grown by both techniques exhibited band edge photoluminescence, while the green defect luminescence was not observed. The photoluminescence of ZnO samples grown on Si(001 ) is attributed to free exciton radiation, while luminescence of samples with similar grain size but grown on sapphire is attributed to electron-hole plasma recombination at a very broad range of excitation intensities.

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