In order to obtain uniform exposure in variably shaped electron beam lithography,the beam current density and edge resolution on the target must not change for different spotshapes and sizes.The key to the goal is the appropriate design of shaping deflectors.A linearand rotation compensation approach is presented.Values of linear and rotation compensationfactors versus the distances between electron source image and centers of deflectors are measuredon an experimental electron beam column with variable spot shaping.The experimental resultsare in good agreement with the calculated ones.
展开▼
