利用密度矩阵的方法研究了一种非对称量子阱的光学非线性,推导出了二次谐波解析表达式,最后利用典型的GaAs/AlGaAs非对称量子阱进行数值计算.数值结果表明,当非对称性增大时,可得到比较大的二次谐波,从而为实验上制作比较大的非线性材料提供一种可行办法.%Within the framework of the compact-density-matrix approach and an iterative method,the second-order susceptibility coeffcient for asymmetrical quantum well are investigated.Finally,the numerical results are presented for a typical GaAs/AlGaAs asymmetric quantum well.The larger secondorder susceptibility coefficient was obtained in this special quantum well.This is a feasible way to get fine nonlinear materials in experiment.
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