Ba0 .67 Sr0 .33 TiO3 thin films were prepared on LaNiO 3/SiO2/Si substrate by radio frequency magnetron sputtering technology at room temperature .After sputtering ,the Ba0 .67 Sr0 .33 TiO3 thin films were annealed by two-step rapid thermal annealing and traditional annealing . The microstructure and the electric properties of the as-prepared Ba0 .67 Sr0 .33 TiO3 thin films were studied . The results showed that the two-step rapid thermal annealing and traditional annealing processing was beneficial to the sufficient crystallization and satisfied electrical properties .%采用磁控溅射技术在室温下制备Ba0．67 Sr0．33 TiO3薄膜，通过引入 LaNiO3作为缓冲层以及对退火工艺的研究，采用两步法快速退火工艺与常规退火工艺结合的方式获得了致密并具有良好电学性能的钛酸锶钡薄膜．X线衍射分析表明室温情况下获得的薄膜是非晶态，需要通过后续的退火处理才能获得晶化的薄膜，采用快速退火与常规退火相结合工艺，即以40℃/s的升温速率，先升温到850℃，再降温到450℃保温180 s ，然后再在500℃常规退火3 h ，可使室温下溅射的呈非晶态的BST薄膜晶化形成具有完全钙钛矿结构的BST 薄膜，薄膜致密，晶粒大小均匀．室温下所制备的BST薄膜在100 Hz时的介电常数约为300，介电损耗约为0．03，具有铁电性．
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