半导体太赫兹量子级联激光器(THz QCL)是一种相干性好线宽窄的太赫兹辐射源,有潜力获得高的输出功率.采用基于非平衡格林函数(NEGF)方法的计算工具设计、生长、制备了基于砷化镓系材料的THz QCL.在10 K温度下,峰值功率达到270 mW,平均功率为2.4 mW,单位面积的输出功率与已报道的最高值相当.采用NEGF方法对器件的温度变化特性做了详细的分析.%Quantum cascade lasers (QCLs) are promising high output power semiconductor-based terahertz (THz) sources with narrow linewidths and wide operating frequency.We have grown and fabricated THz-QCLs based on GaAs/AlGaAs superlattices under the guidance of a newly developed simulation tool based on the framework of Non-Equilibrium Green's Function (NEGF) method.The latest THz-QCLs demonstrated 270 mW peak power and 2.4 mW average power at 10 K,which is comparable to the highest reported value but with a size of more than 4 times larger than ours.Temperature dependence of the device performance are analyzed through the detailed calculations by using the NEGF method.
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