Using the pulsed laser deposition (PLD) technique, Ge(S90Se10)2 films were prepared. After illuminating the film for different time with Hg arc lamp, the saturation state (illuminated time = 90min) was ascertained, and the huge photo-bleaching phenomenon is observed (△E = 0.36ev) at the saturation state. Furthermore, the mechanism of photo-bleaching is also studied. A novel type of photoelectron materials is discovered.%运用激光脉冲沉积法(PLd)制备了Ge(S90Se10)2薄膜,通过运用紫外汞灯对制备的薄膜进行不同时间的辐照,我们确定了达到饱和状态所需要的辐照时间(90分钟).当薄膜处于饱和状态时,巨大的光致漂白效应被观察到了(△E=0.36ev).此外,在本文中,我们也对光致漂白效应的机理进行了阐述,一种新型的光电子材料被发现了.
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