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纳米Cu2 O薄膜的电化学合成及性质研究

         

摘要

采用阴极电沉积法合成了纳米Cu2 O薄膜.利用扫描电镜和XRD对所得样品的形貌进行了表征,并用紫外可见光谱法和循环伏安法对其性质进行研究.结果表明:纳米Cu2 O为立方结构,在300~500 nm有一个肩峰,在652 nm处有一宽的吸收带,在pH=4.74的HAc/NaAc缓冲溶液中有一对氧化还原峰,峰电流与扫速的1/2次方呈线性关系.%Nano Cu2 O film was synthesized by means of cathodic electrodeposition. The obtained samples were characterized by sem and XRD and its property was studied using UV-vis spectroscopy and cyclic voltammetry. Results show that the nanostructured Cu2 O is cubic structure, it has a shoulder peak in the 300 nm to 500 nm, a wide absorption band at 652 nm and a pair of REDOX peak in the pH=4. 74 d/NaAc in buffer solution. In addition, the peak current and scan rate of 1/2 time are linear relationship.

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