碳化硅SiC（silicon carbide）是目前最为成熟的宽禁带半导体材料之一，在高压、高温、高频等领域，碳化硅器件的研究和应用已成为当前的研究热点。针对碳化硅器件目前的生产使用状况，简述了与碳化硅主要生产商CREE 紧密合作的 FREEDM 中心的研究情况，重点分析了高压 SiC MOSFET，IGBT，ETO，JFET 在 SST （Solid State Transformer）和FID（Fault Isolation Device）中的应用。针对各类器件本身的特性，FREEDM中心有针对性的选择了相关应用领域，并开发了多代SST和FID的拓扑，许多重要的研究成果引领了全球高压SiC器件的研究趋势。%The silicon carbide(SiC) is one of the most mature researched wide bandgap semiconductor material now, therefore, it has been became the research hot spot in the high voltage, high temperature, and high frequency power region. According to the practical productions and applications, in this paper the present research status and applied prospects of these devices is demonstrated in the Future Renewable Electric Energy Delivery and Management (FREEDM)Systems Center, which maintains close cooperation with the biggest SiC device manufacturer-Cree, Inc. Then the applications of several high voltage SiC devices are emphasized particularly on MOSFET, IGBT, ETO, and JFET, which are applied to solid state transformer and fault isolation device, and so on. At present, FREEDM systems center has developed several generations of SST and FID based on their intrinsic characteristics of these devices. What’s more, it has gained a lot of important research results act as research leader of the high voltage SiC device.
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