硅基电力电子器件经过长期的发展，其性能已经逼近其材料极限，很难再大幅提升硅基电力电子装置的性能。以碳化硅和氮化镓为代表的第三代宽禁带半导体器件比硅器件具有更优的器件性能，成为电力电子器件新的研究发展方向。首先主要介绍了电动汽车对电力电子变换器的要求及宽禁带器件的发展，然后对宽禁带器件在电动汽车中的研究现状进行了分析和展望，最后指出了宽禁带器件在电动汽车应用中面临的主要问题。%After a long period of development, power devices based on silicon material exhibit some unavoidable physical limitations which limit the improvement of performance of silicon based power converters. Power electronics devices based on silicon carbide and gallium nitride present more promising performance as a consequence of their outstanding properties and represent the new development trend of power electronic devices. First, the requirement of the power electronic converters are introduced in electric vehicles this paper, and the development of wide band gap device. Then, the research status of wide band gap devices in electric vehicles was analyzed and prospected. Finally, the main problems of wide bandgap devices in the application of electric vehicles are pointed out.
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