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首页> 中文期刊> 《半导体学报》 >Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors

Ag-catalyzed GaSb nanowires for flexible near-infrared photodetectors

         
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摘要

High-quality narrow bandgap semiconductors nanowires(NWs)challenge the flexible near-infrared(NIR)photodetectors in next-generation imaging,data communication,environmental monitoring,and bioimaging applications.In this work,complementary metal oxide semiconductor-compatible metal of Ag is deposited on glass as the growth catalyst for the surfactant-assisted chemical vapor deposition of GaSb NWs.The uniform morphology,balance stoichiometry,high-quality crystallinity,and phase purity of as-prepared NWs are checked by scanning electron microscopy,energy dispersive X-ray spectroscopy,high-resolution transmission electron microscopy,and X-ray diffraction.The electrical properties of as-prepared NWs are studied by constructing back-gated field-effect-transistors,displaying a high I_(on)/I_(off) ratio of 10^(4) and high peak hole mobility of 400 cm^(2)/(V·s).Benefiting from the excellent electrical and mechanical flexibility properties,the as-fabricated NW flexible NIR photodetector exhibits high sensitivity and excellent photoresponse,with responsivity as high as 618 A/W and detectivity as high as 6.7×10^(10) Jones.Furthermore,there is no obvious decline in NIR photodetection behavior,even after parallel and perpendicular folding with 1200 cycles.

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