Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Xutang Tao; Jiandong Ye; Shibing Long; Zhitai Jia

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Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

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摘要

As one of the ultra-wide bandgap {UWBG)semiconducting materials,gallium oxide has attractive properties with a wide bandgap of about 4.8 eV and a high breakdown field of about 8 MWcm,which offers an alternative platform for various applications such as high performance power switches,RF amplifiers,solar blind photodetectors,and harsh environment signal processing.

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《半导体学报》 |2019年第1期|5-5|共1页
作者
Xutang Tao; Jiandong Ye; Shibing Long; Zhitai Jia;
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作者单位

Shandong University;

Nanjing University;

University of Science and Technology of China;

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原文格式 PDF
正文语种 chi
中图分类无线电电子学、电信技术;
关键词
Special; Issue; Ultra-Wide; Bandgap; Semiconductor; Gallium; Oxide;

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Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

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