Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

Jinyong Wu; Donglin Huang; Yujie Ye; Jianyuan Wang; Wei Huang; Cheng Li; Songyan Chen; Shaoying Ke

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Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

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We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region.The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm.This structure is suitable for silicon-based epitaxial growth.Annealing is technically applied to form the graded-SiGe.The photodetector reaches a cut-off wavelength at^2300 nm and a low dark-current density under 3 V reverse bias about 0.17 mA/cm^2 is achieved theoretical at room temperature.This work is of great significance for silicon-based detection and communication,from visible to infrared.

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《半导体学报》 |2020年第12期|50-56|共7页
作者
Jinyong Wu; Donglin Huang; Yujie Ye; Jianyuan Wang; Wei Huang; Cheng Li; Songyan Chen; Shaoying Ke;
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作者单位

Key Laboratory of Low Dimensional Condensed Matter Physics(Department of Education of Fujian Province);

Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices;

Department of Physics;

Xiamen University;

Xiamen 361005;

China;

College of Physics and Information Engineering;

Minnan Normal University;

Zhangzhou 363000;

China;

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原文格式 PDF
正文语种 chi
中图分类光电子技术、激光技术;
关键词
flat response; broad response; dark current density; graded-SiGe; Ge0.9Sn0.1;

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Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

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