Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

Rui Zhou; Cui Yu; Chuangjie Zhou; Jianchao Guo; Zezhao He; Yanfeng Wang; Feng Qiu; Hongxing Wang; Shujun Cai; Zhihong Feng

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Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

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In this work,we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra,pulsed I–V characteristics analysis,and radio frequency performances measurements.It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density.Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors.This work should be helpful for further performance improvement of the microwave power diamond devices.

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来源
《半导体学报》 |2020年第12期|90-93|共4页
作者
Rui Zhou; Cui Yu; Chuangjie Zhou; Jianchao Guo; Zezhao He; Yanfeng Wang; Feng Qiu; Hongxing Wang; Shujun Cai; Zhihong Feng;
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作者单位

Hebei Semiconductor Research Institute;

Shijiazhuang 050051;

China;

National Key Laboratory of ASIC;

Hebei Semiconductor Research Institute;

Shijiazhuang 050051;

China;

School of Electronic and Information Engineering;

Xi'an Jiaotong University;

Xi'an 710049;

China;

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原文格式 PDF
正文语种 chi
中图分类半导体技术;
关键词
diamond; transistor; trap; defect; power density;

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Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond

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